Interconnect substrate with embedded semiconductor device and built-in stopper and method of making the same

ABSTRACT

The present invention relates to an interconnect substrate with an embedded device, a built-in stopper and dual build-up circuitries and a method of making the same. In accordance with one preferred embodiment of the present invention, the method includes: forming a stopper on a dielectric layer; mounting a semiconductor device on the dielectric layer using the stopper as a placement guide for the semiconductor device; attaching a stiffener to the dielectric layer; forming a first build-up circuitry and a second build-up circuitry that cover the semiconductor device, the stopper and the stiffener at both sides; and providing a plated through-hole that provides an electrical connection between the first and second build-up circuitries. Accordingly, the stopper can accurately confine the placement location of the semiconductor device and avoid the electrical connection failure between the semiconductor device and the build-up circuitry.

CROSS REFERENCE TO RELATED APPLICATION

This application claims the benefit of filing date of U.S. ProvisionalApplication Ser. No. 61/682,801, entitled “Structure and Manufacture ofSemiconductor Assembly and 3D Stacking thereof” filed Aug. 14, 2012under 35 USC §119(e)(1).

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an interconnect substrate for asemiconductor assembly and a method of making the same, and moreparticularly to an interconnect substrate with embedded semiconductordevice and built-in stopper and a method of making the same.

2. Description of Related Art

As market trend demands for thinner, smarter and cheaper portableelectronics, semiconductor devices for use in these equipments arerequired to further shrink their size and improve electricalperformances at lower cost. Among all the efforts, embedding or built-insemiconductor chip in printed wiring board to form a module assembly isconsidered the most effective approach since it can drastically reducethe overall weight, thickness and improve electrical performance througha shorten interconnect distance.

However, the attempt of embedding chip in a wiring board can encountermany problems. For example, the chip to be embedded is known tovertically and laterally shift during die attach andencapsulation/lamination processes due to thermal characteristics ofplastic materials. The CTE mismatch between metal, dielectric andsilicon at various stages of thermal treatment can result inmisalignment of the build-up interconnect structure to be depositedthereon. U.S. Pat. No. 7,935,893 to Tanaka et. al., U.S. Pat. No.7,944,039 to Aral and U.S. Pat. No. 7,405,103 to Chang disclose variousalignment methods to address manufacturing yield concern. None of theseapproaches offers a proper solution or effective method for controllingdie movement because the underneath adhesive will reflow during curingand therefore dislocates the attached die from the pre-determinedlocation even a highly precise alignment mark and equipment are applied.U.S. Patent Application 2010/0184256 to Chino discloses a resin sealingmethod to fix the semiconductor device adhered to the adhesive layerformed on the support body. This approach may be effective incontrolling die from further movement during sealing process, it doesnot provide any control or adjustment for die attach process and themis-registration is unavoidable due to die attach adhesive reflows.

SUMMARY OF THE INVENTION

The present invention has been developed in view of such a situation,and an object thereof is to provide an interconnect substrate with dualbuild-up circuitries in which a semiconductor device is preciselyaffixed at a predetermined location by a stopper, warp and bend of thesemiconductor device can be suppressed, and electrical connectionbetween the semiconductor device and the build-up circuitry can besecurely retained by conductive via.

In a preferred embodiment, the present invention provides a method ofmaking an interconnect substrate that includes a semiconductor device, astopper, a stiffener and dual build-up circuitries. The method of makingthe interconnect substrate can include: forming a stopper on adielectric layer; mounting a semiconductor device on the dielectriclayer using the stopper as a placement guide for the semiconductordevice that includes an active surface with a contact pad thereon and aninactive surface, wherein the active surface faces a first verticaldirection, the inactive surface faces a second vertical directionopposite the first vertical direction, and the stopper is located inclose proximity to and laterally aligned with and laterally extendsbeyond peripheral edges of the semiconductor device in lateraldirections orthogonal to the vertical directions; attaching a stiffenerto the dielectric layer, including aligning the semiconductor device andthe stopper within an aperture of the stiffener; forming a firstbuild-up circuitry that covers the stopper, the semiconductor device andthe stiffener in the first vertical direction and includes a firstconductive via that directly contacts the contact pad of thesemiconductor device to provide an electrical connection between thesemiconductor device and the first build-up circuitry; forming a secondbuild-up circuitry that covers the stopper, the semiconductor device andthe stiffener in the second vertical direction; and providing a platedthrough-hole that extends through the stiffener in the verticaldirections to provide an electrical connection between the firstbuild-up circuitry and the second build-up circuitry.

Forming the stopper on the dielectric layer can include: providing alaminate substrate that includes a metal layer and the dielectric layer;and then removing a selected portion of the metal layer to form thestopper. Alternatively, forming the stopper on the dielectric layer caninclude: providing a laminate substrate that includes a metal layer andthe dielectric layer; then removing a selected portion of the metallayer to form a recessed portion; then depositing a plastic materialinto the recessed portion as the stopper; and then removing a remainingportion of the metal layer. Accordingly, the stopper can be made of ametal, a photosensitive plastic material or non-photosensitive material.For instance, the stopper can consist essentially of copper, aluminum,nickel, iron, tin or their alloys. The stopper can also consist of epoxyor polyimide.

The method of making an interconnect substrate according to the presentinvention can further include: forming a placement guide on thedielectric layer. Accordingly, attaching the stiffener to the dielectriclayer can include: aligning the semiconductor device and the stopperwithin the aperture of the stiffener with the placement guide being inclose proximity to and laterally aligned with and laterally extendingbeyond the outer peripheral edges of the stiffener in lateraldirections.

Forming the stopper and the placement guide on the dielectric layer caninclude: providing a laminate substrate that includes a metal layer andthe dielectric layer; and then removing a selected portion of the metallayer to form the stopper and the placement guide. Alternatively,forming the stopper and the placement guide on the dielectric layer caninclude: providing a laminate substrate that includes a metal layer andthe dielectric layer; then removing a selected portion of the metallayer to form a recessed portion; then depositing a plastic materialinto the recessed portion as the stopper and the placement guide; andthen removing a remaining portion of the metal layer. Accordingly, likethe stopper, the placement guide for the stiffener can be made of ametal, a photosesitive plastic material or non-photosensitive material,such as copper, aluminum, nickel, iron, tin, alloys, epoxy or polyimide.

The laminate substrate can optionally further include a support plate,and the dielectric layer can be sandwiched between the metal layer andthe support plate. Optionally, the method of making an interconnectsubstrate according to the present invention can further include:removing the support plate or thinning the support plate after mountingthe semiconductor device and attaching the stiffener.

The semiconductor device can be attached to the dielectric layer usingan adhesive that contacts and is sandwiched between the semiconductordevice and the dielectric layer. Likewise, the stiffener can be attachedto the dielectric layer using an adhesive that contacts and issandwiched between the stiffener and the dielectric layer. Additionally,the semiconductor device can be mounted on the dielectric layer with theactive surface or inactive surface facing the dielectric layer. In thecase that the active surface of the semiconductor device faces thedielectric layer, the stopper and the placement guide extend from thedielectric layer in the second vertical direction, and the adhesive cancontact and be coplanar with the stopper and the placement guide in thefirst vertical direction and lower than the stopper and the placementguide in the second vertical direction. As a result, the semiconductordevice and the stiffener can be affixed and mechanically connected tothe first build-up circuitry at predetermined location defined by thestopper and the placement guide that extend from the first insulatinglayer of the first build-up circuitry and respectively extend beyond theactive surface of the semiconductor device and the attached surface ofthe stiffener in the second vertical direction. As the adhesive is lowerthan the stopper and the placement guide in the second verticaldirection, the stopper and the placement guide can stop the undesirablemovement of the semiconductor device and the stiffener during curing theadhesive that contacts and is sandwiched between the active surface ofthe semiconductor device and the first build-up circuitry and betweenthe stiffener and the first build-up circuitry. Likewise, in the casethat the inactive surface of the semiconductor device faces thedielectric layer, the stopper and the placement guide extend from thedielectric layer in the first vertical direction, and the adhesive cancontact and be coplanar with the stopper and the placement guide in thesecond vertical direction and lower than the stopper and the placementguide in the first vertical direction. Accordingly, the semiconductordevice and the stiffener can be affixed and mechanically connected tothe second build-up circuitry at predetermined location defined by thestopper and the placement guide that extend from the second insulatinglayer of the second build-up circuitry and respectively extend beyondthe inactive surface of the semiconductor device and the attachedsurface of the stiffener in the first vertical direction.

The first build-up circuitry can include a first insulating layer andone or more first conductive traces, while the second build-up circuitrycan include a second insulating layer and one or more second conductivetraces. For instance, the first insulating layer covers thesemiconductor device, the stopper and the stiffener in the firstvertical direction and the first conductive traces extend from the firstinsulating layer in the first vertical direction, while the secondinsulating layer covers the semiconductor device, the stopper and thestiffener in the second vertical direction and the second conductivetraces extend from the second insulating layer in the second verticaldirection. As a result, forming the first build-up circuitry and thesecond build-up circuitry can include: providing a first insulatinglayer that covers the stopper, the semiconductor device and thestiffener in the first vertical direction; providing a second insulatinglayer that covers the stopper, the semiconductor device and thestiffener in the second vertical direction; forming one or more firstvia openings that extend through the first insulating layer and arealigned with one or more contact pads of the semiconductor device andoptionally one or more additional first via openings that extend throughthe first insulating layer and are aligned with the stiffener;optionally forming one or more second via openings that extend throughthe second insulating layer and are aligned with the inactive surface ofthe semiconductor device or/and the stiffener; forming one or more firstconductive traces that extend from the first insulating layer in thefirst vertical direction and extend laterally on the first insulatinglayer and extend through the first via openings and optionally theadditional first via openings in the second vertical direction to formone or more first conductive vias in direct contact with the contactpads of the semiconductor device and optionally one or more additionalfirst conductive vias in direct contact with the stiffener; and formingone or more second conductive trace that extend from the secondinsulating layer in the second vertical direction and extend laterallyon the second insulating layer and optionally extend through the secondvia openings in the first vertical direction to form one or more secondconductive vias in direct contact with the inactive surface of thesemiconductor device or/and the stiffener. Accordingly, the firstconductive traces can directly contact the contact pads to providesignal routing for the semiconductor device, and thus the electricalconnection between the semiconductor device and the build-up circuitrycan be devoid of solder. Besides, the second conductive traces candirectly contact the inactive surface of the semiconductor device toprovide thermal dissipation pathway for the semiconductor device. Thefirst and second conductive traces can also directly contact thestiffener for grounding or electrical connections to passive componentssuch as thin film resistors or capacitors deposited thereon. In the casethat the active surface of the semiconductor device faces the dielectriclayer, the first insulating layer of the first build-up circuitryincludes the dielectric layer, and the first via opening extends throughthe dielectric layer and the adhesive. For instance, the dielectriclayer can serve as the first insulating layer and is provided with thefirst via openings that extend through the dielectric layer and theadhesive, followed by forming the first conductive traces that extendfrom the dielectric layer in the first vertical direction and mayinclude the remaining portion of the support plate. Alternatively, ametal layer may be attached to the dielectric layer using an interlayerdielectric, and the combination of the dielectric layer and theinterlayer dielectric serves as the first insulating layer and isprovided with the first via openings that extend through the dielectriclayer, the interlayer dielectric and the adhesive, followed by formingthe first conductive traces that include the metal layer and extend fromthe interlayer dielectric in the first vertical direction. In anothercase that the inactive surface of the semiconductor device faces thedielectric layer, the second insulating layer of the second build-upcircuitry includes the dielectric layer, and the second via openingextends through the dielectric layer and the adhesive. For instance, thesecond insulating layer of the second build-up circuitry may be thedielectric layer or the combination of the dielectric layer and aninterlayer dielectric that bonds a metal layer to the dielectric layer.

The first and second build-up circuitries can further include additionalinsulating layers, additional via openings, and additional conductivetraces if needed for further signal routing. For instance, the firstbuild-up circuitry can further include a third insulating layer, one ormore third via openings and one or more third conductive traces. Thethird insulating layer can extend from the first insulating layer andthe first conductive trace in the first vertical direction and canextend to peripheral edges of the interconnect substrate, and the thirdconductive traces extend from the third insulating layer in the firstvertical direction. As a result, forming the first build-up circuitrycan further include: providing a third insulating layer on the firstinsulating layer and the first conductive trace that extends from thefirst insulating layer and the first conductive trace in the firstvertical direction; then forming one or more third via openings thatextend through the third insulating layer and are aligned with the firstconductive trace; and then forming one or more third conductive tracesthat extend from the third insulating layer in the first verticaldirection and extend laterally on the third insulating layer and extendthrough the third via openings in the second vertical direction to formone or more third conductive vias in direct contact with the firstconductive traces, thereby electrically connecting the first conductivetrace to the third conductive traces. Likewise, the second build-upcircuitry can further include a fourth insulating layer, one or morefourth via openings and one or more fourth conductive traces. The fourthinsulating layer can extend from the second insulating layer and thesecond conductive trace in the second vertical direction and can extendto peripheral edges of the interconnect substrate, and the fourthconductive traces extend from the fourth insulating layer in the secondvertical direction. As a result, providing the second build-up circuitrycan further include: providing a fourth insulating layer on the secondinsulating layer and the second conductive trace that extends from thesecond insulating layer and the second conductive trace in the secondvertical direction; then forming one or more fourth via openings thatextend through the fourth insulating layer and are aligned with thesecond conductive trace; and then forming one or more fourth conductivetraces that extend from the fourth insulating layer in the secondvertical direction and extend laterally on the fourth insulating layerand extend through the fourth via openings in the first verticaldirection to form one or more fourth conductive vias in direct contactwith the second conductive traces, thereby electrically connecting thesecond conductive trace to the fourth conductive traces.

The first and second via openings can be simultaneously formed, and thefirst and second conductive traces can be simultaneously deposited andpatterned. Likewise, the third and fourth via openings can besimultaneously formed, and the third and fourth conductive traces can besimultaneously deposited and patterned. The first, second, third andfourth via openings can have the same size. The first and thirdinsulating layers and conductive traces can have flat elongated surfacesthat face in the first vertical direction, while the second and fourthinsulating layers and conductive traces can have flat elongated surfacesthat face in the second vertical direction.

The outmost conductive traces of the first and second build-upcircuitries can respectively include one or more first and secondinterconnect pads to provide electrical contacts for the next levelassembly or another electronic device such as a semiconductor chip, aplastic package or another semiconductor assembly. The firstinterconnect pads can include an exposed contact surface that faces inthe first vertical direction, while the second interconnect pads caninclude an exposed contact surface that faces in the second verticaldirection. As a result, the interconnect substrate can includeelectrical contacts (i.e. the first and second interconnect pads) thatare electrically connected to one another and located on oppositesurfaces that face in opposite vertical directions, so that theinterconnect substrate with embedded semiconductor device is stackableand the next level assembly or another electronic device can beelectrically connected to the embedded semiconductor device using a widevariety of connection media including wire bonding or solder bumps asthe electrical contacts. Besides, the second build-up circuitry mayfurther include a paddle layer that extends from the outmost insulatinglayer of the second build-up circuitry and has an exposed contactsurface that faces in the second vertical direction. Accordingly,another electronic device can be mounted on the paddle layer and beelectrically connected to the outmost conductive trace of the secondbuild-up circuitry by wire bonding or solder bumps.

Providing the plated through-hole can include forming a through-holethat extends through the stiffener and the dielectric layer in thevertical directions, and then depositing a connecting layer on an innersidewall of the through-hole.

The plated through-hole can be provided during providing the firstbuild-up circuitry and the second build-up circuitry. For instance,providing the plated through-hole can include forming a through-holethat extends through the stiffener and the insulating layers (e.g.extends through the first and second insulating layers, or extendsthrough the first, second, third and fourth insulating layers) in thevertical directions after providing the insulating layers and thendepositing a connecting layer on an inner sidewall of the through-holeduring depositing the conductive traces (e.g. the first conductivetrace/the second conductive trace or the third conductive trace/thefourth conductive trace).

The insulating layers can be deposited and extend to peripheral edges ofthe interconnect substrate by numerous techniques including filmlamination, roll coating, spin coating and spray-on deposition. The viaopenings can be formed through the insulating layers by numeroustechniques including laser drilling, plasma etching andphotolithography. The conductive traces can be formed by depositing aplated layer that covers the insulating layer and extends through thevia opening and then removing selected portions of the plated layerusing an etch mask that defines the conductive trace. The plated layersand the connecting layer can be deposited by numerous techniquesincluding electroplating, electroless plating, evaporating, sputtering,and their combinations as a single layer or multiple layers. The platedlayers can be patterned by numerous techniques including wet etching,electro-chemical etching, laser-assist etching, and their combinationsto define the conductive traces.

By the above-mentioned method, the present invention can provide aninterconnect substrate that includes: a semiconductor device thatincludes an active surface with one or more contact pads thereon and aninactive surface, wherein the active surface faces a first verticaldirection and the inactive surface faces a second vertical directionopposite the first vertical direction; a stopper that serves as aplacement guide for the semiconductor device and is in close proximityto and laterally aligned with and laterally extends beyond peripheraledges of the semiconductor device in lateral directions orthogonal tothe vertical directions; a stiffener that includes an aperture with thesemiconductor device and the stopper extending thereinto; a firstbuild-up circuitry that covers the stopper, the semiconductor device andthe stiffener in the first vertical direction and includes a firstinsulating layer, one or more first via openings and one or more firstconductive traces, wherein the first via openings in the firstinsulating layer are aligned with the contact pads of the semiconductordevice and optionally the stiffener, and the first conductive tracesextend from the first insulating layer in the first vertical directionand extend through the first via openings in the second verticaldirection and directly contact the contact pads and optionally thestiffener; a second build-up circuitry that covers the stopper, thesemiconductor device and the stiffener in the second vertical directionand includes a second insulating layer, optionally one or more secondvia openings and one or more second conductive traces, wherein thesecond via openings in the second insulating layer are aligned with thestiffener and/or the inactive surface of the semiconductor device, andthe second conductive trace extend from the second insulating layer inthe second vertical direction and optionally extend into the second viaopenings in the first vertical direction and directly contact thestiffener and/or the inactive surface; and a plated through-hole thatextends through the stiffener to provide an electrical connectionbetween the first build-up circuitry and the second build-up circuitry.Optionally, the interconnect substrate can further include: a placementguide that is in close proximity to and laterally aligned with andlaterally extends beyond the outer peripheral edges of the stiffener inlateral directions orthogonal to the vertical directions.

The stopper and the placement guide can have patterns againstundesirable movement of the semiconductor device and the stiffener,respectively. For instance, the stopper and the placement guide caninclude a continuous or discontinuous strip or an array of posts. Thestopper and the placement guide can be simultaneously formed and havethe same or different patterns. Specifically, the stopper can belaterally aligned with four lateral surfaces of the semiconductor deviceto stop the lateral displacement of the semiconductor device. Forinstance, the stopper can be aligned along and conform to four sides,two diagonal corners or four corners of the semiconductor device and agap in between the semiconductor device and the stopper preferably is ina range of about 0.001 to 1 mm. The semiconductor device can be spacedfrom the inner wall of the aperture by the stopper, and a bondingmaterial can be added between the semiconductor device and the stiffenerto enhance rigidity or the first insulating layer of the build-upcircuitry may extend into and fill the gap between the semiconductordevice and the stiffener. Moreover, the stopper can also be in closeproximity to and laterally aligned with the inner wall of the apertureto stop the lateral displacement of the stiffener. Likewise, theplacement guide can be laterally aligned with four outer lateralsurfaces of the stiffener to stop the lateral displacement of thestiffener. For instance, the placement guide can be aligned along andconform to four outer sides, two outer diagonal corners or four outercorners of the stiffener and a gap in between the outer peripheral edgesof the stiffener and the placement guide preferably is in a range ofabout 0.001 to 1 mm. Besides, the stopper and the placement guidepreferably have a thickness in a range of 10-200 microns.

The stiffener can extend to peripheral edges of the interconnectsubstrate and provide mechanical support to suppress warp and bend ofthe semiconductor device. Moreover, the stiffener also can provideground/power plane and heat sink for the build-up circuitry. Thestiffener can be a single layer structure or a multi-layer structure(such as a circuit board or a multi-layer ceramic board or a laminate ofa substrate and a conductive layer). For instance, the stiffener can bemade of ceramics or other various inorganic materials, such as aluminumoxide (Al₂O₃), aluminum nitride (AlN), silicon nitride (SiN), silicon(Si), glass, etc. The stiffener can also be made of organic materialssuch as laminated epoxy, polyimide or copper-clad laminate.

The semiconductor device can be a packaged or unpackaged semiconductorchip. For instance, the semiconductor device can be a land grid array(LGA) package or wafer level package (WLP) that includes a semiconductorchip. Alternatively, the semiconductor device can be a semiconductorchip.

The interconnect substrate with embedded semiconductor device can befurther used for first-level or second-level semiconductor assembly. Forinstance, a single chip or multiple chips can be assembled to thesubstrate and form a three dimensional stacked package. Alternatively,the interconnect substrate with embedded device can be further used fora second-level assembly wherein a single package such as BGA or multiplepackages can be soldered onto the substrate and form a three dimensionalstacked module.

Unless specific descriptions or using the term “then” between steps orsteps necessarily occurring in a certain order, the sequence of theabove-mentioned steps is not limited to that set forth above and may bechanged or reordered according to desired design.

The present invention has numerous advantages. The stiffener can providea power/ground plane, a heat sink and a robust mechanical support forthe semiconductor device and the build-up circuitry. The stopper canaccurately confine the placement location of the semiconductor deviceand avoid the electrical connection failure between the semiconductordevice and the build-up circuitry resulted from the lateral displacementof the semiconductor device, thereby improving the manufacturing yieldgreatly.

The direct electrical connection without solder between thesemiconductor device and the build-up circuitry is advantageous to highI/O and high performance. The plated through-hole can provide verticalsignal routing between the two build-up circuitries with respectiveinterconnect pads at both sides of the interconnect substrate, therebyproviding the next level semiconductor assembly with device-on-devicestacking feature. The interconnect substrate made by this method isreliable, inexpensive and well-suited for high volume manufacture.

These and other features and advantages of the present invention will befurther described and more readily apparent from a review of thedetailed description of the preferred embodiments which follows.

BRIEF DESCRIPTION OF THE DRAWINGS

The following detailed description of the preferred embodiments of thepresent invention can best be understood when read in conjunction withthe following drawings, in which:

FIGS. 1 and 2 are cross-sectional views showing a method of forming astopper on a dielectric layer in accordance with an embodiment of thepresent invention;

FIG. 2A is a top view corresponding to FIG. 2;

FIGS. 1′, 1″ and 2′ are cross-sectional views showing an alternativemethod of forming a stopper on a dielectric layer in accordance with anembodiment of the present invention;

FIG. 2A′ is a top view corresponding to FIG. 2′;

FIGS. 2B-2E are top views of various stopper patterns that can bepracticed in the present invention;

FIGS. 3 and 3A are cross-sectional and top views, respectively, of thestructure with a semiconductor device mounted thereon in accordance withan embodiment of the present invention;

FIGS. 4 and 4A are cross-sectional and top views, respectively, of thestructure with a stiffener mounted thereon in accordance with anembodiment of the present invention;

FIGS. 5-8 are cross-sectional views showing a method of making aninterconnect substrate that includes a semiconductor device, astiffener, dual build-up circuitries, a plated through-hole, and astopper around the active surface of the embedded semiconductor devicein accordance with an embodiment of the present invention;

FIG. 9 is a cross-sectional view of a three dimensional stackedsemiconductor assembly that includes an interconnect substrate with anembedded semiconductor device and another semiconductor deviceelectrically connected to the build-up circuitry of the interconnectsubstrate through solder bumps in accordance with an embodiment of thepresent invention;

FIGS. 10 and 10A are cross-sectional and top views, respectively, ofanother interconnect substrate that includes a semiconductor device, astopper, a placement guide, a stiffener, dual build-up circuitries and aplated through-hole in accordance with another embodiment of the presentinvention;

FIGS. 11-16 are cross-sectional views showing a method of making yetanother interconnect substrate that includes a semiconductor device, astiffener, dual build-up circuitries, a plated through-hole, and astopper around the inactive surface of the semiconductor device inaccordance with yet another embodiment of the present invention; and

FIG. 17 is a cross-sectional view of another three dimensional stackedsemiconductor assembly that includes an interconnect substrate with anembedded semiconductor device and another semiconductor deviceelectrically connected to the build-up circuitry of the substratethrough wire bonds in accordance with another embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

Hereafter, examples will be provided to illustrate the embodiments ofthe present invention. Other advantages and effects of the inventionwill become more apparent from the disclosure of the present invention.It should be noted that these accompanying figures are simplified. Thequantity, shape and size of components shown in the figures may bemodified according to practically conditions, and the arrangement ofcomponents may be more complex. Other various aspects also may bepracticed or applied in the invention, and various modifications andvariations can be made without departing from the spirit of theinvention based on various concepts and applications.

[Embodiment 1]

FIGS. 1 and 2 are cross-sectional views showing a method of forming astopper on a dielectric layer in accordance with an embodiment of thepresent invention, and FIG. 2A is a top view corresponding to FIG. 2.

FIG. 1 is a cross-sectional view of a laminate substrate that includesmetal layer 11, dielectric layer 21 and support plate 23. Metal layer 11is illustrated as a copper layer with a thickness of 35 microns.However, metal layer 11 can also be made of other various metalmaterials and is not limited to a copper layer. Besides, metal layer 11can be deposited on dielectric layer 21 by numerous techniques includinglamination, electroplating, electroless plating, evaporating,sputtering, and their combinations as a single layer or multiple layers,and preferably has a thickness in a range of 10 to 200 microns.

Dielectric layer 21 typically is made of epoxy resin, glass-epoxy,polyimide and the like and has a thickness of 50 microns. In thisembodiment, dielectric layer 21 is sandwiched between metal layer 11 andsupport plate 23. However, support plate 23 may be omitted in someembodiments. Support plate 23 typically is made of copper, but copperalloys or other materials are also doable. The thickness of supportplate 23 can range from 25 to 1000 microns, and preferably ranges from35 to 100 microns in consideration of process and cost. In thisembodiment, support plate 23 is illustrated as a copper plate with athickness of 35 microns.

FIGS. 2 and 2A are cross-sectional and top views, respectively, of thestructure with stopper 113 formed on dielectric layer 21. Stopper 113can be formed by removing selected portions of metal layer 11 usingphotolithography and wet etching. In this illustration, stopper 113consists of plural metal posts in a rectangular frame array and conformsto four sides of a semiconductor device subsequently disposed ondielectric layer 21. However, stopper patterns are not limited theretoand can be other various patterns against undesirable movement of thesubsequently disposed semiconductor device.

FIGS. 1′ and 2′ are cross-sectional views showing an alternative methodof forming a stopper on a dielectric layer, and FIG. 2A′ is a top viewcorresponding to FIG. 2′.

FIG. 1′ is a cross-sectional view of a laminate substrate with a set ofcavities 111. The laminate substrate includes metal layer 11, dielectriclayer 21 and support plate 23 as above mentioned, and cavities 111 areformed by removing selected portions of metal layer 11.

FIG. 1″ is a cross-sectional view showing the structure with a plasticmaterial deposited into the cavities 111 as a stopper 113.

FIGS. 2′and 2A′ are cross-sectional and top views, respectively, of thestructure with stopper 113 formed on dielectric layer 21. Stopper 113can be formed by dispensing or printing a photosensitive plasticmaterial (e.g., epoxy, polyimide, etc.) or non-photosensitive materialinto cavities 111, followed by removing overall metal layer 11. Herein,stopper 113 is illustrated as an array of plural resin posts andconforms to two diagonal corners of a subsequently disposedsemiconductor device.

FIGS. 2B-2E are top views of other various stopper patterns forreference. For instance, stopper 113 may consist of a continuous ordiscontinuous strip and conform to four sides (as shown FIGS. 2B and2C), two diagonal corners or four corners (as shown in FIGS. 2D and 2E)of a subsequently disposed semiconductor device.

FIGS. 3-8 are cross-sectional views showing a method of making aninterconnect substrate that includes a semiconductor device, a stopper,a stiffener, a plated through hole, and dual build-up circuitries inaccordance with an embodiment of the present invention.

As shown in FIG. 8, interconnect substrate 101 includes semiconductordevice 31, stopper 113, stiffener 41, plated through-hole 502 and dualbuild-up circuitries 201, 202. Semiconductor device 31 includes activesurface 311, inactive surface 313 opposite to active surface 311, andcontact pads 312 at active surface 311. First build-up circuitry 201 iselectrically connected to contact pads 312 of semiconductor device 31and includes first insulating layer 211 and first conductive traces 231,while second build-up circuitry 202 is electrically connected to thefirst build-up circuitry 201 via plated through-hole 502 and includessecond insulating layer 221 and second conductive traces 241. Stopper113 extends from first insulating layer 211 of first build-up circuitry201 in the upward direction and is in close proximity to peripheraledges of semiconductor device 31. Stopper 113 as well as semiconductordevice 31 are aligned with and extend into aperture 411 of stiffener 41.

FIGS. 3 and 3A are cross-sectional and top views, respectively, of thestructure with semiconductor device 31 such as a semiconductor chipmounted on dielectric layer 21 using adhesive 131. Semiconductor device31 includes active surface 311, inactive surface 313 opposite to activesurface 311, and contact pads 312 at active surface 311.

Stopper 113 can serve as a placement guide for semiconductor device 31,and thus semiconductor device 31 is precisely placed at a predeterminedlocation with its active surface 311 facing dielectric layer 21. Stopper113 extends from dielectric layer 21 beyond active surface 311 ofsemiconductor device 31 in the upward direction and is laterally alignedwith and laterally extends beyond four sides of semiconductor device 31in the lateral directions. As stopper 113 is in close proximity to andconforms to four lateral surfaces of semiconductor device 31 in lateraldirections and adhesive 131 under semiconductor device 31 is lower thanstopper 113, any undesirable movement of semiconductor device 31 due toadhesive curing can be avoided. Preferably, a gap in betweensemiconductor device 31 and stopper 113 is in a range of about 0.001 to1 mm.

FIGS. 4 and 4A are cross-sectional and top views, respectively, of thestructure with stiffener 41 mounted on dielectric layer 21 usingadhesive 131. Semiconductor device 31 and stopper 113 are aligned withand inserted into aperture 411 of stiffener 41 and stiffener 41 ismounted on dielectric layer 21 using adhesive 131. Aperture 411 isformed by mechanical drilling through stiffener 41 and can be formedwith other techniques such as punching and laser cutting. Stiffener 41is illustrated as an epoxy sheet with a thickness of about the same tothat of the semiconductor chip. The stiffener 41 can be other insulatinglayer such as glass, ceramic or multi-layer laminate structures, such asa multi-layer circuit board.

Semiconductor device 31 and the inner wall of aperture 411 are spacedfrom one another by stopper 113. Stopper 113 is in close proximity toand laterally aligned with four inner walls of aperture 411 and adhesive113 under stiffener 41 is lower than stopper 113, and thus anyundesirable movement of stiffener 41 also can be avoided before adhesive131 is fully cured. Optionally, a bonding material (not shown in thefigure) can be added between semiconductor device 31 and stiffener 41 toenhance rigidity.

FIG. 5 is a cross-sectional view of the structure showing first viaopenings 213 formed through adhesive 131, dielectric layer 21 andsupport plate 23 to expose contact pads 312 and selected portions ofstiffener 41. First via openings 213 may be formed by numeroustechniques including laser drilling, plasma etching andphotolithography. Laser drilling can be enhanced by a pulsed laser.Alternatively, a scanning laser beam with a metal mask can be used. Forinstance, copper can be etched first to create a metal window followedby laser. First via openings 213 typically have a diameter of 50microns, and dielectric layer 21 is considered first insulating layer211 of build-up circuitry.

FIG. 6 is a cross-sectional view of the structure with second insulatinglayer 221 formed on inactive surface 313 of semiconductor device 31 andstiffener 41 in the upward direction. Second insulating layer 221 coverssemiconductor device 31, stiffener 41 and stopper 113 in the upwarddirection, and extends into the gap between semiconductor device 31 andstiffener 41 in aperture 411. Second insulating layer 221 can be epoxyresin, glass-epoxy, polyimide and the like deposited by numeroustechniques including film lamination, spin coating, roll coating, andspray-on deposition and typically has a thickness of 50 microns.Preferably, first insulating layer 211 and second insulating layer 221are the same material.

FIG. 7 is a cross-sectional view of the structure with through-holes501. Through-holes 501 extend through second insulating layer 221,stiffener 41, adhesive 131, first insulating layer 211 and support plate23 in the vertical direction. Through-holes 501 are formed by mechanicaldrilling and can be formed by other techniques such as laser drillingand plasma etching with or without wet etching.

Referring now to FIG. 8, first conductive traces 231 are formed on firstinsulating layer 211 by depositing plated layer 23′ on support plate 23and into first via openings 213, and then patterning support plate 23and plated layer 23′ thereon. Alternatively, in some embodiments whichapply a laminate substrate without support plate 23 or remove supportplate 23 after the step illustrated in FIG. 4, the dielectric layer 21can be directly metallized to form first conductive traces 231 afterforming first via openings 213 and through-holes 501. Meanwhile, secondconductive traces 241 are formed on second insulating later 221 bydepositing plated layer 23′ on second insulating layer 221 and thenpatterning plated layer 23′. Also, plated layer 23′ is further depositedas a connecting layer on the inner wall of through-holes 501 to provideplated through holes 502.

Plated layer 23′ can be deposited by numerous techniques includingelectroplating, electroless plating, evaporating, sputtering, and theircombinations as a single layer or multiple layers. For instance, platedlayer 23′ is deposited by first dipping the structure in an activatorsolution to render the insulating layer catalytic to electroless copper,and then a thin copper layer is electrolessly plated to serve as theseeding layer before a second copper layer is electroplated on theseeding layer to a desirable thickness. Alternatively, the seeding layercan be formed by sputtering a thin film such as titanium/copper beforedepositing the electroplated copper layer on the seeding layer. Once thedesired thickness is achieved, support plate 23 and/or plated layer 23′can be patterned to form first conductive traces 231 and secondconductive traces 241 by numerous techniques including wet etching,electro-chemical etching, laser-assist etching, and their combinationswith an etch mask (not shown) thereon that defines first conductivetraces 231 and second conductive traces 241, respectively.

Support plate 23 and plated layer 23′ thereon are shown as a singlelayer for convenience of illustration. The boundary (shown in phantom)between the metal layers may be difficult or impossible to detect sincecopper is plated on copper. However, the boundary between plated layer23′ and first insulating layer 211, between plated layer 23′ and secondinsulating layer 221, and between plated layer 23′ and stiffener 41 isclear.

Accordingly, as shown in FIG. 8, interconnect substrate 101 isaccomplished and includes semiconductor device 31, stopper 113,stiffener 41, dual build-up circuitries 201, 202 and platedthrough-holes 502. In this illustration, first build-up circuitry 201includes first insulating layer 211 and first conductive traces 231,while second build-up circuitry 202 includes second insulating layer 221and second conductive traces 241. Stopper 113 extends from firstinsulating layer 211 of first build-up circuitry 201 and extends beyondactive surface 311 of semiconductor device 31 in the upward direction toaccurately confine the placement location of semiconductor device 31.First conductive traces 231 extend from first insulating layer 211 inthe downward direction, extend laterally on first insulating layer 211and extend into first via openings 213 in the upward direction to formfirst conductive vias 233 in electrical contact with contact pads 312and stiffener 41. Second conductive traces 241 extend from secondinsulating layer 221 in the upward direction and extend laterally onsecond insulating layer 221. Plated through holes 502 extend throughstiffener 41 in the vertical directions to provide electrical connectionbetween first conductive traces 231 and second conductive traces 241.

FIG. 9 is a cross-sectional view of a three-dimensional semiconductorassembly in which another semiconductor devices 71, 73 are attached tothe interconnect substrate 101 at second build-up circuitry 202 viasolder bumps 81 on second interconnect pads 244 exposed by solder maskmaterial 611. In this illustration, solder mask material 611 is disposedover first build-up circuitry 201 and second build-up circuitry 202,fills the remaining space in plated through-hole 502 and includes soldermask openings 613 that are aligned with first and second interconnectpads 234, 244. External semiconductor devices 71, 73 can be electricallyconnected to the embedded semiconductor device 31 through secondbuild-up circuitry 202, plated through-hole 502 and first build-upcircuitry 201. Additionally, first interconnect pads 234 of firstbuild-up circuitry 201 can accommodate a conductive joint, such assolder bump, solder ball, pin and the like for electrical communicationand mechanical attachment with external components or a PCB. Herein,solder mask openings 613 may be formed by numerous techniques includingphotolithography, laser drilling and plasma etching, and solder bumps 81can be provided by numerous techniques including screen printing solderpaste followed by a reflow process or by electroplating.

[Embodiment 2]

FIGS. 10 and 10A are cross-sectional and top views, respectively, ofanother interconnect substrate 102 with placement guide 115 in closeproximity to the outer peripheral edges of stiffener 41 and secondconductive vias 243 in direct contact with inactive surface 313 ofsemiconductor device 31 and stiffener 41 in accordance with anotherembodiment of the present invention.

In this embodiment, interconnect substrate 102 is manufactured in amanner similar to that illustrated in Embodiment 1, except thatplacement guide 115 is simultaneously formed during stopper 113formation by removing selected portions of metal layer 11 to accuratelyconfine the placement location of stiffener 41 and second conductivevias 243 are formed in direct contact with inactive surface 313 ofsemiconductor device 31 and stiffener 41. Herein, first build-upcircuitry 201 includes first insulating layer 211, first conductivetraces 231, third insulating layer 251 and third conductive traces 271,while second build-up circuitry 202 includes second insulating layer221, second conductive traces 241, fourth insulating layer 261 andfourth conductive traces 281. First conductive traces 231 extends fromfirst insulating layer 211 in the downward direction and extends intofirst via openings 213 in the upward direction to form first conductivevias 233 in direct contact with contact pads 312 and stiffener 41, whilesecond conductive traces 241 extends from second insulating layer 221 inthe upward direction and extends into second via openings 223 in thedownward direction to form second conductive vias 243 in direct contactwith inactive surface 313 and stiffener 41. Third insulating layer 251extends from and covers first insulating layer 211 and first conductivetraces 231 in the downward direction, while fourth insulating layer 261extends from and covers second insulating layer 221 and secondconductive traces 241 in the upward direction. Third conductive traces271 extends from third insulating layer 251 in the downward directionand extends into third via openings 253 in the upward direction to formthird conductive vias 273 in direct contact with first conductive traces231, while fourth conductive traces 281 extends from fourth insulatinglayer 261 in the upward direction and extends into fourth via openings263 in the downward direction to form fourth conductive vias 283 indirect contact with second conductive traces 241. Plated through-holes502 extend through fourth insulating layer 261, second insulating layer221, stiffener 41, adhesive 131, first insulating layer 211 and thirdinsulating layer 251 in the vertical directions to provide an electricalconnection between third conductive traces 271 and fourth conductivetraces 281.

As shown in FIG. 10A, the placement location of stiffener 41 isaccurately confined by placement guide 115 that extends from firstinsulating layer 211 beyond the attached surface of stiffener 41 in theupward direction and is laterally aligned with and laterally extendsbeyond four outer lateral surfaces of stiffener 41 in the lateraldirections. Placement guide 115 is illustrated as plural metal posts andconforms to four outer sides of stiffener 41 in lateral directions.However, placement guide 115 is not limited to the illustrated patternand can be designed in other various patterns. As placement guide 115 isin close proximity to and conforms to four outer lateral surfaces ofstiffener 41 in lateral directions and adhesive 131 under stiffener 41is lower than placement guide 115, any undesirable movement of stiffener41 due to adhesive curing can be avoided. Preferably, a gap in betweenthe outer peripheral edges of stiffener 41 and placement guide 115 is ina range of about 0.001 to 1 mm.

[Embodiment 3]

FIGS. 11-16 are cross-section views showing a method of making yetanother interconnect substrate with the stopper around the inactivesurface of the semiconductor device in accordance with yet anotherembodiment of the present invention.

For purposes of brevity, any description in Embodiment 1 is incorporatedherein insofar as the same is applicable, and the same description neednot be repeated.

FIG. 11 is a cross-sectional view of the structure which is manufacturedby the same steps shown in FIGS. 1-4, except that semiconductor device31 is mounted on dielectric layer 21 with its inactive surface 313facing dielectric layer 21.

FIG. 12 is a cross-sectional view of the structure with first insulatinglayer 211 formed on active surface 311 of semiconductor device 31 andstiffener 41 in the upward direction. First insulating layer 211 coverssemiconductor device 31, stiffener 41 and stopper 113 in the upwarddirection, and extends into the gap between semiconductor device 31 andstiffener 41 in aperture 411.

FIG. 13 is a cross-sectional view of the structure showing first viaopenings 213 formed through first insulating layer 211. First viaopenings 213 are aligned with and expose contact pads 312 ofsemiconductor device 31 and selected portions of stiffener 41.

FIG. 14 is a cross-sectional view of the structure in which supportplate 23 is thinned to form metal layer 24 with a desired thickness.Metal layer 24 is illustrated as a copper layer with a thickness ofabout 15 microns, and dielectric layer 21 is considered as secondinsulating layer 221 of build-up circuitry.

FIG. 14′ is a cross-sectional view of the structure with optional firstconductive traces 231 and second conductive trace 241. First conductivetraces 231 are formed on first insulating layer 211 by depositing platedlayer on first insulating layer 211 and into first via openings 213, andthen pattern the plated layer. Second conductive traces 241 are formedon a second insulating layer by the steps of: forming second viaopenings 223 that extend through metal layer 24, second insulating layer221 and adhesive 131; and then forming the second conductive trace 241be depositing a metal layer that extends through the second via opening223 in the first vertical direction to form second conductive vias 243in direct contact with the inactive surface of the semiconductor device31 and the stiffener 41.

FIG. 15 is a cross-sectional view of the structure with through-holes501. Through-holes 501 extend through first insulating layer 211,stiffener 41, adhesive 131, second insulating layer 221 and metal layer24 in the vertical direction.

Referring now to FIG. 16, first conductive traces 231 are formed onfirst insulating layer 211 by depositing plated layer 24′ on firstinsulating layer 211 and into first via openings 213 and then patterningplated layer 24′. Meanwhile, second conductive traces 241 and paddlelayer 246 are formed on second insulating later 221 by depositing platedlayer 24′ on metal layer 24 and then patterning metal layer 24 andplated layer 24′ thereon. Also, plated layer 24′ is further deposited asa connecting layer on the inner wall of through-holes 501 to provideplated through holes 502.

Metal layer 24 and plated layer 24′ thereon are shown as a single layerfor convenience of illustration. The boundary (shown in phantom) betweenthe metal layers may be difficult or impossible to detect since copperis plated on copper. However, the boundary between plated layer 24′ andfirst insulating layer 211, between plated layer 24′ and secondinsulating layer 221, and between plated layer 24′ and stiffener 41 isclear.

Accordingly, as shown in FIG. 16, interconnect substrate 103 isaccomplished and includes semiconductor device 31, stopper 113,stiffener 41, dual build-up circuitries 201, 202 and platedthrough-holes 502. In this illustration, first build-up circuitry 201includes first insulating layer 211 and first conductive traces 231,while second build-up circuitry 202 includes second insulating layer221, second conductive traces 241 and paddle layer 246. Stopper 113extends from second insulating layer 221 of second build-up circuitry202 and extends beyond inactive surface 313 of semiconductor device 31in the upward direction to accurately confine the placement location ofsemiconductor device 31. First conductive traces 231 extend from firstinsulating layer 211 in the upward direction, extend laterally on firstinsulating layer 211 and extend into first via openings 213 in thedownward direction to form first conductive vias 233 in electricalcontact with contact pads 312 and stiffener 41. Second conductive traces241 and paddle layer 246 extend from second insulating layer 221 in thedownward direction and extend laterally on second insulating layer 221.Plated through holes 502 extend through stiffener 41 in the verticaldirections to provide electrical connection between first conductivetraces 231 and second conductive traces 241.

FIG. 17 is a cross-sectional view of a three-dimensional semiconductorassembly in which another semiconductor device 74 is attached tointerconnect substrate 103 at paddle layer 246 of second build-upcircuitry 202 and is electrically connected to second conductive traces241 via wire bonds 83. In this illustration, solder mask material 611 isdisposed over first build-up circuitry 201 and second build-up circuitry202, fills the remaining space in plated through-hole 502 and includessolder mask openings 613 that are aligned with first and secondinterconnect pads 234, 244 as well as selected portions of paddle layer264. Semiconductor device 74 on paddle layer 246 can be electricallyconnected to the embedded semiconductor device 31 through wire bonds 83,second build-up circuitry 202, plated through-hole 502 and firstbuild-up circuitry 201. Additionally, encapsulant 91 such as moldingcompound can be applied to protect semiconductor device 74 and wirebonds 83.

The interconnect substrates and three-dimensional semiconductorassemblies described above are merely exemplary. Numerous otherembodiments are contemplated. In addition, the embodiments describedabove can be mixed-and-matched with one another and with otherembodiments depending on design and reliability considerations. Forinstance, the interconnect substrate may include multiple sets ofstoppers to accurately define the relative positions of multipleadditional semiconductor devices, passive components or other electronicdevices, and the build-up circuitry can include additional conductivetraces to accommodate additional semiconductor devices, passivecomponents or other electronic devices. Likewise, the stiffener caninclude multiple apertures to accommodate additional semiconductordevices, passive components or other electronic devices.

The semiconductor device can be a packaged or unpackaged chip.Furthermore, the semiconductor device can be a bare chip, LGA, or QFN,etc. The stopper can be customized for the semiconductor device. Forinstance, the stopper can have a pattern that defines a square orrectangular area with the same or similar topography as thesemiconductor device.

The term “adjacent” refers to elements that are integral (single-piece)or in contact (not spaced or separated from) with one another. Forinstance, the first conductive trace is adjacent to the active surfacebut not the inactive surface.

The term “overlap” refers to above and extending within a periphery ofan underlying element. Overlap includes extending inside and outside theperiphery or residing within the periphery. For instance, in theposition that the stopper extends from the dielectric layer in theupward direction, the stiffener overlaps the dielectric layer since animaginary vertical line intersects the stiffener and the dielectriclayer, regardless of whether another element such as the adhesive isbetween the stiffener and the dielectric layer and is intersected by theline, and regardless of whether another imaginary vertical lineintersects the dielectric layer but not the stiffener (within theaperture of the stiffener). Likewise, the adhesive overlaps thedielectric layer, the stiffener overlaps the adhesive and the adhesiveis overlapped by the stiffener. Moreover, overlap is synonymous withover and overlapped by is synonymous with under or beneath.

The term “contact” refers to direct contact. For instance, theconductive trace contacts the active surface but not the inactivesurface.

The term “cover” refers to incomplete and complete coverage in avertical and/or lateral direction. For instance, in the position thatthe inactive surface of the semiconductor device faces the upwarddirection, the first build-up circuitry covers the semiconductor devicein the downward direction regardless of whether another element such asthe adhesive is between the semiconductor device and the first build-upcircuitry, and the second build-up circuitry cover the semiconductordevice in the upward direction.

The term “layer” refers to patterned and un-patterned layers. Forinstance, the metal layer of the laminate substrate can be anun-patterned blanket sheet before photolithography and wet etching.Furthermore, a layer can include stacked layers.

The terms “opening” and “aperture” and “hole” refer to a through holeand are synonymous. For instance, in the position that the stopperextends from the dielectric layer in the upward direction, thesemiconductor device is exposed by the stiffener in the upward directionwhen it is inserted into the aperture in the stiffener.

The term “inserted” refers to relative motion between elements. Forinstance, the semiconductor device is inserted into the apertureregardless of whether the stiffener is stationary and the semiconductordevice moves towards the stiffener, the semiconductor device isstationary and the stiffener moves towards the semiconductor device orthe semiconductor device and the stiffener both approach the other.Furthermore, the semiconductor device is inserted (or extends) into theaperture regardless of whether it goes through (enters and exits) ordoes not go through (enters without exiting) the aperture.

The phrase “aligned with” refers to relative position between elementsregardless of whether elements are spaced from or adjacent to oneanother or one element is inserted into and extends into the otherelement. For instance, the stopper is laterally aligned with thesemiconductor device since an imaginary horizontal line intersects thestopper and the semiconductor device, regardless of whether anotherelement is between the stopper and the semiconductor device and isintersected by the line, and regardless of whether another imaginaryhorizontal line intersects the semiconductor device but not the stopperor intersects the stopper but not the semiconductor device. Likewise,the first via opening is aligned with the contact pads of thesemiconductor device, and the semiconductor device and the stopper arealigned with the aperture.

The phrase “in close proximity to” refers to a gap between elements notbeing wider than the maximum acceptable limit. As known in the art, whenthe gap between the semiconductor device and the stopper is not narrowenough, the location error of the semiconductor device due to thelateral displacement of the semiconductor device within the gap mayexceed the maximum acceptable error limit. Once the location error ofthe semiconductor device goes beyond the maximum limit, it is impossibleto align the contact pad with a laser beam, resulting in the electricalconnection failure between the semiconductor device and the build-upcircuitry. According to the pad size of the semiconductor device, thoseskilled in the art can ascertain the maximum acceptable limit for a gapbetween the semiconductor device and the stopper through trial and errorto prevent the electrical connection failure between the semiconductordevice and the build-up circuitry. Thereby, the description “the stopperis in close proximity to the peripheral edges of the semiconductordevice” means that the gap between the peripheral edges of thesemiconductor device and the stopper is narrow enough to prevent thelocation error of the semiconductor device from exceeding the maximumacceptable error limit.

The phrase “mounted on” includes contact and non-contact with a singleor multiple support element(s). For instance, the semiconductor deviceis mounted on the dielectric layer regardless of whether it contacts thedielectric layer or is separated from the dielectric layer by anadhesive.

The phrase “electrical connection” or “electrically connects” or“electrically connected” refers to direct and indirect electricalconnection. For instance, the plated through-hole provides an electricalconnection for first conductive trace regardless of whether it isadjacent to the first conductive trace or electrically connected to thefirst conductive trace by the third conductive trace.

The term “above” refers to upward extension and includes adjacent andnon-adjacent elements as well as overlapping and non-overlappingelements. For instance, in the position that the active surface facesthe downward direction and is attached to the dielectric layer, thestopper extends above, is adjacent to and protrudes from the dielectriclayer.

The term “below” refers to downward extension and includes adjacent andnon-adjacent elements as well as overlapping and non-overlappingelements. For instance, in the position that the active surface facesthe downward direction and is attached to the dielectric layer, thefirst build-up circuitry extends below, is adjacent to and protrudesfrom the adhesive in the downward direction. Likewise, the firstbuild-up circuitry extends below the semiconductor device even though itis not adjacent to the semiconductor device.

The “first vertical direction” and “second vertical direction” do notdepend on the orientation of the interconnect substrate, as will bereadily apparent to those skilled in the art. For instance, the activesurface of the semiconductor device faces the first vertical directionand the inactive surface of the semiconductor device faces the secondvertical direction regardless of whether the interconnect substrate isinverted. Likewise, the stopper is “laterally” aligned with thesemiconductor device in a lateral plane regardless of whether theinterconnect substrate is inverted, rotated or slanted. Thus, the firstand second vertical directions are opposite one another and orthogonalto the lateral directions, and a lateral plane orthogonal to the firstand second vertical directions intersects laterally aligned elements.Furthermore, the first vertical direction is the downward direction andthe second vertical direction is the upward direction in the positionthat the active surface of the semiconductor device faces the downwarddirection, and the first vertical direction is the upward direction andthe second vertical direction is the downward direction in the positionthat the active surface of the semiconductor device faces the upwarddirection.

The interconnect substrate and the semiconductor assembly using the sameaccording to the present invention have numerous advantages. Theinterconnect substrate made by this method and the semiconductorassembly using the same are reliable, inexpensive and well-suited forhigh volume manufacture. The stiffener provides the mechanical support,dimensional stability and controls the overall flatness and the thermalexpansion of the build-up circuitry such that the semiconductor devicecan be securely connected to the build-up circuitry under thermalcycling even though the coefficient of thermal expansion (CTE) betweenthem may be different. The direct electrical connection without solderbetween the semiconductor device and the build-up circuitry isadvantageous to high I/O and high performance. Particularly, the stoppercan accurately confine the placement location of the semiconductordevice and avoid the electrical connection failure between thesemiconductor device and the build-up circuitry resulted from thelateral displacement of the semiconductor device, thereby improving themanufacturing yield greatly.

The manufacturing process is highly versatile and permits a wide varietyof mature electrical and mechanical connection technologies to be usedin a unique and improved manner. The manufacturing process can also beperformed without expensive tooling. As a result, the manufacturingprocess significantly enhances throughput, yield, performance and costeffectiveness compared to conventional packaging techniques.

The embodiments described herein are exemplary and may simplify or omitelements or steps well-known to those skilled in the art to preventobscuring the present invention. Likewise, the drawings may omitduplicative or unnecessary elements and reference labels to improveclarity.

Various changes and modifications to the embodiments described hereinwill be apparent to those skilled in the art. For instance, thematerials, dimensions, shapes, sizes, steps and arrangement of stepsdescribed above are merely exemplary. Such changes, modifications andequivalents may be made without departing from the spirit and scope ofthe present invention as defined in the appended claims.

Although the present invention has been explained in relation to itspreferred embodiment, it is to be understood that many other possiblemodifications and variations can be made without departing from thespirit and scope of the invention as hereinafter claimed.

We claim:
 1. A method of making an interconnect substrate with anembedded device and a built-in stopper, comprising: forming a stopper ona dielectric layer; which includes: providing a laminate substrate thatincludes a metal layer and the dielectric layer; and then removing aselected portion of the metal layer to form the stopper; mounting asemiconductor device on the dielectric layer using the stopper as aplacement guide for the semiconductor device that includes an activesurface with a contact pad thereon and an inactive surface, wherein theactive surface faces a first vertical direction, the inactive surfacefaces a second vertical direction opposite the first vertical direction,and the stopper is located in close proximity to and laterally alignedwith and laterally extends beyond peripheral edges of the semiconductordevice in lateral directions orthogonal to the vertical directions;attaching a stiffener to the dielectric layer, including aligning thesemiconductor device and the stopper within an aperture of thestiffener; forming a first build-up circuitry that covers the stopper,the semiconductor device and the stiffener in the first verticaldirection and includes a first conductive via that directly contacts thecontact pad of the semiconductor device to provide an electricalconnection between the semiconductor device and the first build-upcircuitry; forming a second build-up circuitry that covers the stopper,the semiconductor device and the stiffener in the second verticaldirection; and providing a plated through-hole that extends through thestiffener in the vertical directions to provide an electrical connectionbetween the first build-up circuitry and the second build-up circuitry.2. The method of claim 1, wherein the electrical connection between thesemiconductor device and the first build-up circuitry is devoid ofsolder.
 3. The method of claim 1, wherein the semiconductor device ismounted on the dielectric layer with the active surface facing thedielectric layer and the stopper extends from the dielectric layer inthe second vertical direction.
 4. The method of claim 3, wherein thesemiconductor device is attached to the dielectric layer using anadhesive that contacts and is sandwiched between the semiconductordevice and the dielectric layer.
 5. The method of claim 4, wherein theadhesive contacts and is coplanar with the stopper in the first verticaldirection and is lower than the stopper in the second verticaldirection.
 6. The method of claim 4, wherein the forming the firstbuild-up circuitry and the second build-up circuitry includes: providinga first insulating layer that includes the dielectric layer and coversthe stopper, the semiconductor device and the stiffener in the firstvertical direction; providing a second insulating layer that covers thestopper, the semiconductor device and the stiffener in the secondvertical direction; forming a first via opening that extends through thefirst insulating layer and the adhesive and is aligned with the contactpad of the semiconductor device; forming a first conductive trace thatextends from the first insulating layer in the first vertical directionand extends laterally on the first insulating layer and extends throughthe first via opening in the second vertical direction to form the firstconductive via in direct contact with the contact pad of thesemiconductor device; and forming a second conductive trace that extendsfrom the second insulating layer in the second vertical direction andextends laterally on the second insulating layer.
 7. The method of claim6, wherein the forming the first build-up circuitry includes: forming anadditional first via opening that extends through the first insulatinglayer and is aligned with the stiffener; and then forming the firstconductive trace that extends through the additional first via openingin the second vertical direction to form an additional first conductivevia in direct contact with the stiffener.
 8. The method of claim 6,wherein the forming the second build-up circuitry includes: formingsecond via openings that extend through the second insulating layer andare aligned with the inactive surface of the semiconductor device andthe stiffener; and then forming the second conductive trace that extendsthrough the second via openings in the first vertical direction to formsecond conductive vias in direct contact with the inactive surface ofthe semiconductor device and the stiffener.
 9. The method of claim 1,wherein the semiconductor device is mounted on the dielectric layer withthe inactive surface facing the dielectric layer and the stopper extendsfrom the dielectric layer in the first vertical direction.
 10. Themethod of claim 9, the semiconductor device is attached to thedielectric layer using an adhesive that contacts and is sandwichedbetween the semiconductor device and the dielectric layer.
 11. Themethod of claim 10, wherein the adhesive contacts and is coplanar withthe stopper in the second vertical direction and is lower than thestopper in the first vertical direction.
 12. The method of claim 10,wherein the forming the first build-up circuitry and the second build-upcircuitry includes: providing a first insulating layer that covers thestopper, the semiconductor device and the stiffener in the firstvertical direction; providing a second insulating layer that includesthe dielectric layer and covers the stopper, the semiconductor deviceand the stiffener in the second vertical direction; forming a first viaopening that extends through the first insulating layer and is alignedwith the contact pad of the semiconductor device; forming a firstconductive trace that extends from the first insulating layer in thefirst vertical direction and extends laterally on the first insulatinglayer and extends through the first via opening in the second verticaldirection to form the first conductive via in direct contact with thecontact pad of the semiconductor device; and forming a second conductivetrace that extends from the second insulating layer in the secondvertical direction and extends laterally on the second insulating layer.13. The method of claim 12, wherein the forming the first build-upcircuitry includes: forming an additional first via opening in the firstinsulating layer that extends through the first insulating layer and isaligned with the stiffener; and then forming the first conductive tracethat extends through the additional first via opening in the secondvertical direction to form an additional first conductive via in directcontact with the stiffener.
 14. The method of claim 12, wherein theforming the second build-up circuitry includes: forming second viaopenings that extend through the second insulating layer and theadhesive and are aligned with the inactive surface of the semiconductordevice and the stiffener; and then forming the second conductive tracethat extends through the second via openings in the first verticaldirection to form second conductive vias in direct contact with theinactive surface of the semiconductor device and the stiffener.
 15. Themethod of claim 1, wherein the providing the plated through-holeincludes: forming a through-hole that extends through the stiffener andthe dielectric layer in the vertical directions; and then depositing aconnecting layer on an inner sidewall of the through-hole.
 16. Themethod of claim 1, wherein the stopper include a continuous ordiscontinuous strip or an array of posts.
 17. The method of claim 1,wherein a gap in between the semiconductor device and the stopper is ina range of 0.001 to 1 mm.
 18. The method of claim 1, wherein the stopperhas a height in a range of 10 to 200 microns.
 19. The method of claim 1,wherein the stiffener is a laminated epoxy or polyimide.
 20. The methodof claim 1, wherein the semiconductor device is mounted on thedielectric layer with the inactive surface facing the dielectric layerand the stopper extends from the dielectric layer in the first verticaldirection.
 21. The method of claim 20, the semiconductor device isattached to the dielectric layer using an adhesive that contacts and issandwiched between the semiconductor device and the dielectric layer.22. The method of claim 21, wherein the adhesive contacts and iscoplanar with the stopper in the second vertical direction and is lowerthan the stopper in the first vertical direction.
 23. The method ofclaim 20, wherein the forming the first build-up circuitry and thesecond build-up circuitry includes: providing a first insulating layerthat covers the stopper, the semiconductor device and the stiffener inthe first vertical direction; providing a second insulating layer thatincludes the dielectric layer and covers the stopper, the semiconductordevice and the stiffener in the second vertical direction; forming afirst via opening that extends through the first insulating layer and isaligned with the contact pad of the semiconductor device; forming afirst conductive trace that extends from the first insulating layer inthe first vertical direction and extends laterally on the firstinsulating layer and extends through the first via opening in the secondvertical direction to form the first conductive via in direct contactwith the contact pad of the semiconductor device; and forming a secondconductive trace that extends from the second insulating layer in thesecond vertical direction and extends laterally on the second insulatinglayer.
 24. The method of claim 23, wherein the forming the firstbuild-up circuitry includes: forming an additional first via opening inthe first insulating layer that extends through the first insulatinglayer and is aligned with the stiffener; and then forming the firstconductive trace that extends through the additional first via openingin the second vertical direction to form an additional first conductivevia in direct contact with the stiffener.
 25. The method of claim 23,wherein the forming the second build-up circuitry includes: formingsecond via openings that extend through the second insulating layer andthe adhesive and are aligned with the inactive surface of thesemiconductor device and the stiffener; and then forming the secondconductive trace that extends through the second via openings in thefirst vertical direction to form second conductive vias in directcontact with the inactive surface of the semiconductor device and thestiffener.
 26. A method of making an interconnect substrate with anembedded device and a built-in stopper, comprising: forming a stopper ona dielectric layer; which includes: providing a laminate substrate thatincludes a metal layer and the dielectric layer; then removing aselected portion of the metal layer to form a recessed portion; thendepositing a plastic material into the recessed portion; and thenremoving a remaining portion of the metal layer; mounting asemiconductor device on the dielectric layer using the stopper as aplacement guide for the semiconductor device that includes an activesurface with a contact pad thereon and an inactive surface, wherein theactive surface faces a first vertical direction, the inactive surfacefaces a second vertical direction opposite the first vertical direction,and the stopper is located in close proximity to and laterally alignedwith and laterally extends beyond peripheral edges of the semiconductordevice in lateral directions orthogonal to the vertical directions;attaching a stiffener to the dielectric layer, including aligning thesemiconductor device and the stopper within an aperture of thestiffener; forming a first build-up circuitry that covers the stopper,the semiconductor device and the stiffener in the first verticaldirection and includes a first conductive via that directly contacts thecontact pad of the semiconductor device to provide an electricalconnection between the semiconductor device and the first build-upcircuitry; forming a second build-up circuitry that covers the stopper,the semiconductor device and the stiffener in the second verticaldirection; and providing a plated through-hole that extends through thestiffener in the vertical directions to provide an electrical connectionbetween the first build-up circuitry and the second build-up circuitry.27. The method of claim 26, wherein the electrical connection betweenthe semiconductor device and the first build-up circuitry is devoid ofsolder.
 28. The method of claim 26, wherein the semiconductor device ismounted on the dielectric layer with the active surface facing thedielectric layer and the stopper extends from the dielectric layer inthe second vertical direction.
 29. The method of claim 28, wherein thesemiconductor device is attached to the dielectric layer using anadhesive that contacts and is sandwiched between the semiconductordevice and the dielectric layer.
 30. The method of claim 29, wherein theadhesive contacts and is coplanar with the stopper in the first verticaldirection and is lower than the stopper in the second verticaldirection.
 31. The method of claim 29, wherein the forming the firstbuild-up circuitry and the second build-up circuitry includes: providinga first insulating layer that includes the dielectric layer and coversthe stopper, the semiconductor device and the stiffener in the firstvertical direction; providing a second insulating layer that covers thestopper, the semiconductor device and the stiffener in the secondvertical direction; forming a first via opening that extends through thefirst insulating layer and the adhesive and is aligned with the contactpad of the semiconductor device; forming a first conductive trace thatextends from the first insulating layer in the first vertical directionand extends laterally on the first insulating layer and extends throughthe first via opening in the second vertical direction to form the firstconductive via in direct contact with the contact pad of thesemiconductor device; and forming a second conductive trace that extendsfrom the second insulating layer in the second vertical direction andextends laterally on the second insulating layer.
 32. The method ofclaim 31, wherein the forming the first build-up circuitry includes:forming an additional first via opening that extends through the firstinsulating layer and is aligned with the stiffener; and then forming thefirst conductive trace that extends through the additional first viaopening in the second vertical direction to form an additional firstconductive via in direct contact with the stiffener.
 33. The method ofclaim 31, wherein the forming the second build-up circuitry includes:forming second via openings that extend through the second insulatinglayer and are aligned with the inactive surface of the semiconductordevice and the stiffener; and then forming the second conductive tracethat extends through the second via openings in the first verticaldirection to form second conductive vias in direct contact with theinactive surface of the semiconductor device and the stiffener.
 34. Themethod of claim 26, wherein the providing the plated through-holeincludes: forming a through-hole that extends through the stiffener andthe dielectric layer in the vertical directions; and then depositing aconnecting layer on an inner sidewall of the through-hole.
 35. Themethod of claim 26, wherein the stopper include a continuous ordiscontinuous strip or an array of posts.
 36. The method of claim 26,wherein a gap in between the semiconductor device and the stopper is ina range of 0.001 to 1 mm.
 37. The method of claim 26, wherein thestopper has a height in a range of 10 to 200 microns.
 38. The method ofclaim 26, wherein the stiffener is a laminated epoxy or polyimide.